TG420-S

Optical power output: 50mW
Peak wavelength: typically 420 nm @RT
TopGaN laser diode, 5.6 mm package

TGL-420 S SPECs

TGL- 420 LAR

Devices made for operation in external cavity or similar optical systems.
Laser front facet features low reflectivity AR coating: R<1 %
Peak wavelength: typically 420 nm @RT
TopGaN laser diode, 5.6 mm package

TGL-420 LAR SPECS

TGLD diodes

TopGaN is manufacturing engineering samples of laser diodes emitting in the spectral range from 420 up to 460 nm. These devices are assembled in 5.6 mm (TO-56) packages.

LASER DIODE RELIABILITY SPECS

Laser diode arrays

TopGaN develops multi-Watt range laser diode array emiting UV-violet-blue region. TopGaN’s ambition is to provide simple, monolitic emitters able to replace multiple-laser diode designs used at present.

Nitride epi wafers

TopGaN is offering customized wafers of (AlGaIn)N epi structures.

The structures include those for HEMTs, LEDs and LDs. They can be grown on GaN bulk substrates, sapphire, SiC and Si (up to 4 inch diameter).

The customers are encouraged to contact us to get additional information on the properties of the epi-wafers desired.