Nitride epi wafers

TopGaN is offering customized wafers of (AlGaIn)N epi structures.

The structures include those for HEMTs, LEDs and LDs. They can be grown on GaN bulk substrates, sapphire, SiC and Si (up to 4 inch diameter).

The customers are encouraged to contact us to get additional information on the properties of the epi-wafers desired.