TopGaN uses always the highest quality GaN substrates, closely collaborating with the world-class gallium nitride crystals manufacturers, ensuring the lowest possible defect density in its epistructures.

TopGaN uses a combination of many epitaxial methods including MOVPE, PA MBE and HVPE for the fabrication of its device structures. TopGaN is the first to demonstrate a laser diode fully fabricated by PA MBE method.

TopGaN is the one of pioneers of the development of nitride multi-emitter sources for displays, medicine, printing and environmental applications.

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